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III-nitride device integrates sensing and memory for in-sensor computing
来源: Phys.org - latest science and technology news stories · 发布于
A new study published in Nature Materials reports that researchers have developed an aluminum gallium nitride device that combines light detection, memory and basic processing by controlling charge at polarization interfaces. The device can detect light at the nanowatt-per-square
A new study published in Nature Materials reports that researchers have developed an aluminum gallium nitride device that combines light detection, memory and basic processing by controlling charge at polarization interfaces. The device can detect light at the nanowatt-per-square-centimeter level and operate stably at temperatures up to 300°C.
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